丝印：NCE4555K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4555K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =55A RDS(ON) =9.2mΩ @ VGS=10V (Typ) RDS(ON) =13mΩ @ VGS=4.5V (Typ) ● High density cell

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