NCE6080AI

Marking：NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCE6080AK

Marking：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCE6080AT

Marking：NCE6080AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCE6080D

Marking：NCE6080D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCE6080ED

Marking：NCE6080ED；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCE6080EK

Marking：NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCE609

Marking：NCE609；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE609usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=40V,ID=21A RDS(ON)

NCE60H10D

Marking：NCE60H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCE60H10K

Marking：NCE60H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCE60H15A

Marking：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)