NCE60P04R

Marking：NCE60P04R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P04Rusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications.GeneralFeatures ●VDS=-60V,ID=-4.3A RDS(ON)

NCE60P05R

Marking：NCE60P05R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P05Rusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-5A RDS(ON)

NCE60P06S

Marking：NCE60P06S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P06Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-6A RDS(ON)

NCE60P07AS

Marking：NCE60P07AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P07ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-7A RDS(ON)

NCE60P08AS

Marking：NCE60P08AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P08ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-60V,ID=-8A RDS(ON)

NCE60P09AS

Marking：NCE60P09AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P09ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-9A RDS(ON)

NCE60P09K

Marking：NCE60P09K；Package：TO-252；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P09Kusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications. Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-9A RDS(ON)

NCE60P09S

Marking：NCE60P09S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P09Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-9A RDS(ON)

NCE60P10K

Marking：NCE60P10K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-10A RDS(ON)

NCE60P12AS

Marking：NCE60P12AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P12ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-12A RDS(ON)