NCE60TD120UT

Marking：NCE60TD120UT；Package：TO-247；1200V, 60A, Trench FS II Fast IGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ⚫TrenchFSIITechnologyOffering ⚫VerylowVCE(sat

NCE60TD60BP

Marking：NCE60TD60BP；Package：TO-3P；600V, 60A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE60TD60BT

Marking：NCE60TD60BT；Package：TO-247；600V, 60A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE60TD65BP

Marking：NCE60TD65BP；Package：TO-3P；650V, 60A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE60TD65BT

Marking：NCE60TD65BT；Package：TO-247-3L；650V, 60A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE60TD65BT4

Marking：NCE60TD65BT4；Package：TO-247-4L；650V, 60A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

NCE6525Q

Marking：NCE6525Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6525Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=65V,ID=25A RDS(ON)

NCE65NF099T

Marking：NCE65NF099T；Package：TO-247；N-Channel Super Junction Power MOSFET Ⅲ

GeneralDescription Theseriesofdevicesuseadvancedtrenchgatesuper junctiontechnologyanddesigntoprovideexcellentRDS(ON) withlowgatecharge.ThissuperjunctionMOSFETfitsthe industry’sAC-DCSMPSrequirementsforPFC,AC/DC powerconversion,andindustrialpowerapplications.

NCE65T130

Marking：NCE65T130；Package：TO-220；N-Channel Super Junction Power MOSFET Ⅲ

GeneralDescription Theseriesofdevicesuseadvancedtrenchgatesuper junctiontechnologyanddesigntoprovideexcellentRDS(ON) withlowgatecharge.ThissuperjunctionMOSFETfitsthe industry’sAC-DCSMPSrequirementsforPFC,AC/DC powerconversion,andindustrialpowerapplications.

NCE65T130

Marking：NCE65T130；Package：TO-220；N-Channel Super Junction Power MOSFET Ⅲ

GeneralDescription Theseriesofdevicesuseadvancedtrenchgatesuper junctiontechnologyanddesigntoprovideexcellentRDS(ON) withlowgatecharge.ThissuperjunctionMOSFETfitsthe industry’sAC-DCSMPSrequirementsforPFC,AC/DC powerconversion,andindustrialpowerapplications.