NCE60H15AD

Marking：NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H15AT

Marking：NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H15T

Marking：NCE60H15T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H18

Marking：NCE60H18；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H18usesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=60V,ID=180A RDS(ON)

NCE60H21

Marking：NCE60H21；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION TheNCE60H21usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GENERALFEATURES ●VDS=60V,ID=210A RDS(ON)

NCE60H28LL

Marking：NCE60H28LL；Package：TO-LL；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H28LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply Gen

NCE60H30T

Marking：NCE60H30T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H30Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=300A RDS(ON)

NCE60ND08S

Marking：NCE60ND08S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND08Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=8A RDS(ON)

NCE60NP09S

Marking：NCE60NP09S；Package：SOP-8；NCE 60V Complementary MOSFET

Description TheNCE60NP09Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=9A RDS(ON)

NCE60P03R

Marking：NCE60P03R；Package：SOT-223-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)