NCE6009XS

Marking：NCE6009XS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6009XSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=9A RDS(ON)

NCE6010J

Marking：NCE6010J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6010Jusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=10A RDS(ON)

NCE6012AS

Marking：NCE6012AS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6012ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NCE6012CS

Marking：NCE6012CS；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6012CSusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=12A RDS(ON)

NCE6020A

Marking：NCE6020A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCE6020AI

Marking：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCE6020AL

Marking：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6020ALusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=20A RDS(ON)

NCE6020AQ

Marking：NCE6020AQ；Package：DFN3.3X3.-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description heNCE6020AQusesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbeusedina widevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply G

NCE6025Q

Marking：NCE6025Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6025Qusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=25A RDS(ON)

NCE6030K

Marking：NCE6030K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6030Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=30A RDS(ON)