NCE40ED65VT中文资料无锡新洁能股份数据手册PDF规格书

厂商型号	NCE40ED65VT
功能描述	650V 40A Trench FS Gen.7 IGBT
丝印标识	NCE40ED65VT
封装外壳	TO-247-3L
文件大小	1.11933 Mbytes
页面数量	9 页
生产厂商	Wuxi NCE Power Semiconductor Co., Ltd
企业简称	NCEPOWER【无锡新洁能股份】
中文名称	无锡新洁能股份有限公司官网
原厂标识	NCEPOWER
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 23:01:00
人工找货	NCE40ED65VT价格和库存，欢迎联系客服免费人工找货

General Description

Using NCE's proprietary high density trench gate design and advanced FS

(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior

conduction and switching performances, and easy parallel operation.

特性 Features

 Trench field stop Gen.7 Technology Offering

 Low saturation voltage: VCEsat = 1.45V(Typ.) @ IC = 40 A

 High speed switching, low switching losses

 Maximum junction temperature Tvjmax = 175°C

 Tighten parameter distribution

 High ruggedness, temperature stable behavior

 Pb-free lead plating; RoHS compliant

Application

 PV power

 Three-level Solar String Inverter

 UPS