丝印：NCE4015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =15A RDS(ON)

文件：617.8 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 40-V (D-S) MOSFET

文件：1.00993 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

12-200V N-Channel Trench MOSFET

The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications. • VDS=40V,ID =15ARDS(ON) <10mΩ@ VGS=10V (Typ. 6.1 mΩ)RDS(ON) <15mΩ@ VGS=4.5V (Typ. 11.4 mΩ)• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation• Specialprocess technol;

NCEPower

新洁能

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：222.45 Kbytes 页数：12 Pages

TECCOR

DUAL 4-STAGE STATIC SHIFT REGISTER (WITH SERIAL INPUT/PARALLEL OUTPUT)

文件：262.38 Kbytes 页数：6 Pages

TOSHIBA

东芝