丝印：NCE4015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =15A RDS(ON)

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The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications. • VDS=40V,ID =15ARDS(ON) <10mΩ@ VGS=10V (Typ. 6.1 mΩ)RDS(ON) <15mΩ@ VGS=4.5V (Typ. 11.4 mΩ)• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation• Specialprocess technol;

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