520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET

OverviewReplaced by MRF1517NT1. There are no form, fit or function changes with this part replacement. The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large–signal, comm \n•Specified Performance @ 520 MHz, 7.5 Volts\nOutput Power: 8 Watts\nPower Gain: 11 dB\nEfficiency: 55%\n\n•Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive\n\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n\n•Excellent Thermal Stability\n\n•Broadband ;

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RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：277.99 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli

文件：288.84 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common

文件：345.48 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistor

文件：285.38 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：285.38 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：285.38 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V

The MRF1517NT1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 7.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 7.5 VoltsOutput Power: 8 WattsPower Gain: 14 dBEfficiency: 70%\n• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Excellent Thermal Stability\n• N Suffix Indicates Le;

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