MRF160

MOSFET BROADBAND RF POWER FET

TheRFMOSFETLine PowerFieldEffectTransistor N–ChannelEnhancement–ModeMOSFET Designedprimarilyforwidebandlarge–signaloutputanddriverfrom30–500MHz. •TypicalPerformanceat400MHz,28Vdc OutputPower=4.0Watts Gain=17dB Efficiency=50 •ExcellentThermal

MRF160

MOSFET BROADBAND RF POWER FET

TheRFMOSFETLine PowerFieldEffectTransistor N–ChannelEnhancement-ModeMOSFET Designedprimarilyforwidebandlarge–signaloutputanddriverfrom30–500MHz. •Guaranteed28Volt,500MHzperformance Outputpower=4.0Watts Gain=16dB(Min) Efficiency=55(Typ) •Excel

MRF160

Fast Acting Radial Lead Micro Fuse Series

FastActingRadialLeadMicroFuseSeries

MRF160

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

TheRFMOSFETLine:BroadbandPowerFET4W,to500MHz,28V Designedprimarilyforwidebandlarge–signaloutputanddriverfrom30–500MHz. N–ChannelenhancementmodeMOSFET •Guaranteed28V,500MHzperformance Outputpower=4.0W Gain=16dB(min.) Efficiency=55(typ.) •E

MRF160

POWE FIELD EFFECT TRANSISTOR

DESCRIPTION: TheMRF160isanEnhancement-ModeN-ChannelTMOSdesignedforwidebandlarge-signalamplifierandoscillatorapplicationsto500MHz.

MRF160

TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

MRF160

The RF MOSFET Line: Broadband Power FET

MRF160

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：249-06 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 500MHZ 249-06

MRF16006

RF POWER TRANSISTOR NPN SILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=6Watts MinimumGain=7.4dB,@6Watts Minimu

MRF16006

RF POWER TRANSISTOR NPN SILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=6Watts MinimumGain=7.4dB,@6Watts Minimu

MRF16006

The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designedfor28Vmicrowavelarge–signal,commonbase,ClassC,CWamplifierapplicationsintherange1600–1640MHz •Specified28V,1.6GHzClassCcharacteristics Outputpower=6W Minimumgain=7.4dB,@6W Minimumefficiency=40@6W •Characterizedwithseriesequiva

MRF16030

RF POWER TRANSISTOR NPN SILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=30Watts MinimumGain=7.5dB,@30Watts

MRF16030

RF POWER TRANSISTOR NPN SILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=30Watts MinimumGain=7.5dB,@30Watts

MRF16030

The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V

Designedfor28Vmicrowavelarge–signal,commonbase,ClassC,CWamplifierapplicationsintherange1600–1640MHz •Specified28V,1.6GHzClassCcharacteristics Outputpower=30W Minimumgain=7.5dB,@30W Minimumefficiency=40@30W •Characterizedwithseriesequ

MRF160_15

Broadband Power FET

MRF160_17

The RF MOSFET Line: Broadband Power FET

MRF16006

The RF Line NPN Silicon Power Transistor

MRF16006_15

The RF Line NPN Silicon Power Transistor

MRF16006_17

The RF Line NPN Silicon Power Transistor

MRF16006

包装：托盘 封装/外壳：395C-01 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：TRANS RF NPN 28V 6W 395C-01