The Broadband RF TMOS짰 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode • Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55 (Typ.) • Facilitates manual gain control, ALC and modulati

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MA-COM

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

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Motorola

摩托罗拉

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55 (Typ) •

文件：493.99 Kbytes 页数：16 Pages

MACOM

The Broadband RF TMOS? 2W, 500MHz, 28V

文件：880.74 Kbytes 页数：18 Pages

MA-COM

The Broadband RF MOSFET Line 2W, 500MHz, 28V

Designed for wideband large signal amplifier and oscillator applications to 500MHz. ·N–Channel enhancement mode\n·Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)\n·Facilitates Manual Gain Control, ALC and Modulation Techniques\n·100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR\n·Excellent;

MACOM

TMOS BROADBAND RF POWER FET

恩XP

Package：305A-01；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 500MHZ 305A-01

MACOM Technology Solutions

The Broadband RF TMOS Line

文件：880.74 Kbytes 页数：18 Pages

MA-COM

The Broadband RF TMOS짰

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MA-COM