N-Channel Enhancement Mode TMOS RF FET

DESCRIPTION: The ASI MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz. FEATURES: • PG = 12 dB min at 150 MHz • Omnigold™ Metalization System • 2 – 200 MHz operation

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ASI

TMOS RF FET N-Channel Enhancement Mode

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET N-CH 65V 4.5A

NJS

新泽西半导体

MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, ideally suited for C

文件：225.1 Kbytes 页数：12 Pages

MACOM

The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, idea

文件：472.26 Kbytes 页数：14 Pages

MA-COM

The RF MOSFET Line 45W, 150MHz, 28V

文件：472.26 Kbytes 页数：14 Pages

MA-COM

RF Power Field-Effect Transistor

文件：95.42 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF MOSFET Line

文件：472.26 Kbytes 页数：14 Pages

MA-COM

The RF MOSFET Line

文件：1.06387 Mbytes 页数：15 Pages

MA-COM

The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. ·N–Channel Enhancement Mode MOSFET\n·Excellent Thermal Stability Suited for Cass A Operation\n·Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)\n·Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur R;

MACOM