The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, idea

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MA-COM

MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET • Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) • Excellent thermal stability, ideally suited for C

文件：225.1 Kbytes 页数：12 Pages

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RF Power Field-Effect Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

The RF MOSFET Line 45W, 150MHz, 28V

文件：472.26 Kbytes 页数：14 Pages

MA-COM

The RF MOSFET Line

文件：472.26 Kbytes 页数：14 Pages

MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line 45W, 150MHz, 28V

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. ·N–Channel Enhancement Mode MOSFET\n·Excellent Thermal Stability Suited for Cass A Operation\n·Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)\n·Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur R;

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Package：211-07；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 200MHZ 211-07

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