Broadband RF Power MOSFET Broadband RF Power MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

文件：293.84 Kbytes 页数：9 Pages

MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

文件：161.75 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. N–Channel enhancement mode MOSFET • Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 17 dB (typ.) Efficiency = 45 (typ.)

文件：175.67 Kbytes 页数：7 Pages

MACOM

Broadband RF Power MOSFET 600W, to 80MHz, 50V

文件：293.84 Kbytes 页数：9 Pages

MA-COM

600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range.• Specified 50 Volts, 30 MHz Characteristics\nOutput Power = 600 Watts\nPower Gain = 17 dB (Typ)\nEfficiency = 45% (Typ)

恩XP

Broadband RF Power MOSFET 600W, to 80MHz, 50V

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. ·N–Channel enhancement mode MOSFET\n·Specified 50 volts, 30 MHz Characteristics -Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.);

MACOM

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

ASI Semiconductor

Package：368-03；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 125V 100MHZ 368-03

MACOM Technology Solutions

Broadband RF Power MOSFET

文件：293.84 Kbytes 页数：9 Pages

MA-COM

Broadband RF Power MOSFET

文件：735.96 Kbytes 页数：10 Pages

MA-COM