MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

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MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

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MACOM

The RF MOSFET Line 20W, 500MHz, 28V

文件：560.77 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line 20W, 500MHz, 28V

文件：560.77 Kbytes 页数：11 Pages

MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line 20W, 500MHz, 28V

Designed primarily for wideband large–signal output and driver from 30– 500MHz. ·N–Channel Enhancement Mode MOSFET\n·Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%\n·Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001\n·100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR\n·Low ;

MACOM

Package：319-07；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 500MHZ 319-07

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