MRF166C数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Designed primarily for wideband large–signal output and driver from 30– 500MHz.

特性 Features

·N–Channel Enhancement Mode MOSFET
·Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%
·Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001
·100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR
·Low Crss — 4.0 pF @ VDS = 28 V
·Facilitate Manual Gain Control, ALC and Modulation Techniques

应用 Application

·Aerospace and Defense
·ISM