MRF160中文资料The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V数据手册MACOM规格书

描述 Description

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

特性 Features

·N–Channel enhancement mode MOSFET
·Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)
·100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
·Facilitates Manual Gain Control, aLS and Modulation Techniques
·Excellent Thermal Stability, Ideally Suite for Class A Operation
·Low Crss – 0.8 pF Typical at VDS = 28 V

应用 Application

·Aerospace and Defense
·ISM