MRF166C分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs

Designed primarily for wideband large–signal output and driver from 30– 500MHz.

• Low Crss— 4.5 pF @ VDS= 28 V

• MRF166C — Typical Performance at 400 MHz, 28 Vdc

Output Power = 20 W

Gain = 17 dB

Efficiency = 55

• Optional 4–Lead Flange Package (MRF166)

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,SD1902, and ST1001

• 100 Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.