RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

文件：231.99 Kbytes 页数：5 Pages

MICROSEMI

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 (Typ)

文件：20.25 Kbytes 页数：1 Pages

ASI

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

文件：94.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

文件：143.85 Kbytes 页数：5 Pages

ADPOW

RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

文件：146.09 Kbytes 页数：5 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

RF LOW POWER TRANSISTOR NPN SILICON

恩XP

包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V 175MHZ

MICROSEMI

美高森美

RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

文件：146.09 Kbytes 页数：5 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技