RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low

文件：85.29 Kbytes 页数：4 Pages

Microsemi

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF904 is Designed for General Purpose Amplifier Applications. FEATURES: • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA

文件：38.86 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Lo

文件：115.24 Kbytes 页数：4 Pages

ADPOW

NPN SILICON RF TRANSISTOR

ASI Semiconductor

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：TO-206AF，TO-72-4 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 15V 4GHZ TO72

Microsemi

美高森美

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

文件：648.59 Kbytes 页数：12 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

文件：227.43 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

文件：227.43 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

文件：144.82 Kbytes 页数：8 Pages

Motorola

摩托罗拉