NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF317is Designed for Class C, 28 V High Band Applications up to 200 MHz. FEATURES: • Internal Input Matching Network • PG= 9.0 dB at 100 W/150 MHz • Omnigold™ Metalization System

文件：18.71 Kbytes 页数：1 Pages

ASI

The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W Minimum gain = 9.0 dB • Built–in matching network for broadband operation • 100 tested for load mismatch at all phase angl

文件：220.2 Kbytes 页数：6 Pages

MA-COM

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB • Built–In Matching Network for Broadband

文件：115.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

The RF Line NPN Silicon RF Power Transistor

The RF Line ​​​​​​​NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB • Built–In Matching Network for Broadband

文件：144.53 Kbytes 页数：5 Pages

MACOM

NPN Silicon RF power transistor

Description: MRF317 is designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.

文件：46.11 Kbytes 页数：2 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V

文件：220.2 Kbytes 页数：6 Pages

MA-COM

The RF Line NPN Silicon RF Power Transistors

100 W, 30 – 200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON• Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB\n• Built–In Matching Network for Broadband Operation\n• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR\n• Gold Metall

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF317is Designed for Class C, 28 V High Band Applications up to 200 MHz.\n\nFEATURES:\n• Internal Input Matching Network\n• PG= 9.0 dB at 100 W/150 MHz\n• Omnigold™ Metalization System

ASI Semiconductor

Trans RF BJT NPN 35V 12A 4-Pin Case 316-01

NJS

新泽西半导体

Package：316-01；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：TRANS RF NPN 35V 12A 316-01

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