N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

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MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

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MACOM

The RF MOSFET Line 100W, 400MHz, 28V

文件：238.07 Kbytes 页数：7 Pages

MA-COM

The RF MOSFET Line 100W, 400MHz, 28V

文件：238.07 Kbytes 页数：7 Pages

MA-COM

The RF MOSFET Line

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MA-COM

The RF MOSFET Line 100W, 400MHz, 28V

文件：703.94 Kbytes 页数：8 Pages

MA-COM

The RF MOSFET Line 100W, 400MHz, 28V

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·N-Channel Enhancement Mode Device\n·Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.)\n·Low Crss — 20 pF Typ @ VDS = 28 V\n·Low Thermal Resistance\n·100% Rruggedness Tested at Rated Output Power;

MACOM

Package：333-04；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 400MHZ 333-04

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