NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF429is Designed for High voltage applications up tp 30MHz FEATURES: • PG= 13 dB min. at 150 W/30 MHz • IMD3= -32 dBc max. at 150 W(PEP) • Omnigold™ Metalization System

文件：35.27 Kbytes 页数：1 Pages

ASI

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP) Minimum gain = 13 dB Efficiency = 45 • Intermodulation distortion @

文件：222.11 Kbytes 页数：7 Pages

MA-COM

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB

文件：141.35 Kbytes 页数：6 Pages

Motorola

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB

文件：163.19 Kbytes 页数：5 Pages

MACOM

NPN Silicon RF power transistor

Description: MRF429 is designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45

文件：31.88 Kbytes 页数：1 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V

文件：714.97 Kbytes 页数：7 Pages

MA-COM

NPN SILICON RF POWER TRANSISTOR

150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICONDesignedprimarily for high–voltage applications as a high–power linear amplifierfrom 2.0 to 30MHz. Ideal for marine and base station equipment.• Specified 50 Volt, 30 MHz Characteristics —\n   Output Power = 150 W (PEP)\n   Minimum Gain = 13 dB\n

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF429is Designed for High voltage applications up tp 30MHzFEATURES:\n•  PG= 13 dB min. at 150 W/30 MHz\n•  IMD3= -32 dBc max. at 150 W(PEP)\n• Omnigold™ Metalization System

ASI Semiconductor

Trans RF BJT NPN 50V 16A 4-Pin Case 211-11

NJS

Package：211-11，2 型；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：TRANS RF NPN 50V 16A 211-11

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