MRF429分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

The RF Line

NPN Silicon RF Power Transistor

Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

• Specified 50 Volt, 30 MHz Characteristics —

Output Power = 150 W (PEP)

Minimum Gain = 13 dB

Efficiency = 45

• Intermodulation Distortion @ 150 W (PEP) —

IMD = –32 dB (Max)

• Diffused Emitter Resistors for Superior Ruggedness

• 100 Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

@ 150 W CW