NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

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ASI

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation dist

文件：189.77 Kbytes 页数：5 Pages

MA-COM

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

文件：102.95 Kbytes 页数：4 Pages

Motorola

摩托罗拉

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 100 W (P

文件：133.56 Kbytes 页数：4 Pages

MACOM

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. ● Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 ● Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.) ● 100 tested for load

文件：94.54 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF Power Transistor

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

文件：251.51 Kbytes 页数：5 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

文件：189.77 Kbytes 页数：5 Pages

MA-COM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ.FEATURES:\n• PG = 12 dB min. at 100 W/30 MHz\n• IMD3 = -30 dBc max. at 100 W(PEP)\n• Omnigold™ Metalization System

ASI Semiconductor

The RF Line NPN silicon RF power transistor

100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON\nDesigned primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.\n• Specified 12.5 Volt, 30 MHz Characteristics —\n    Output Power = 100 W (PEP)\n    Minimum Gain = 10 dB\n   Efficiency = 40%\n• Intermodulation Distort

恩XP

Trans GP BJT NPN 20V 20A 4-Pin Case 211-11

NJS