NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. FEATURES INCLUDE: • Gold Metalization • 30:1 VSWR

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ASI

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed performance at 400 MHz, 28 V Output power = 20 W Power gain = 10 dB min. Efficiency = 50 min. • 100 tested for load mismatch at all phase angles with 30

文件：223.43 Kbytes 页数：5 Pages

MA-COM

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

文件：110.2 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

文件：184.96 Kbytes 页数：5 Pages

MACOM

Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 100 Tested for Load Mismatch at all Phase Angles with

文件：98.7 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon RF power transistor

Description: MRF323 is. designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min

文件：36.67 Kbytes 页数：1 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V

文件：223.43 Kbytes 页数：5 Pages

MA-COM

Bipolar

Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. ·Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.\n·Gold Metallization System for High Reliability\n·100%Tested for Load Mismatch at all phase Angels with 30:1 VSWR •\n·Computer Controlled Wirebonding Gives Consistent Input Impedanc;

MACOM

RF POWER TRANSISTOR NPN SILICON

恩XP

Trans GP BJT NPN 33V 3A 4-Pin Case 244-04

NJS

新泽西半导体