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型号	下载订购	功能描述	制造商上传企业	LOGO
MJD32C	文件：765.23 Kbytes Page：6 Pages	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low Speed ,Load Formed for Surface Mount Application. Applications General Purpose Amplifier. 文件：765.23 Kbytes 页数：6 Pages	FOSHAN 蓝箭电子	FOSHAN
MJD32C	文件：230.35 Kbytes Page：11 Pages	丝印：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect 文件：230.35 Kbytes 页数：11 Pages	NEXPERIA 安世	NEXPERIA
MJD32C	文件：1.20505 Mbytes Page：2 Pages	丝印：D-PAK；Package：TO-252；TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electrically 文件：1.20505 Mbytes 页数：2 Pages	FS	FS
MJD32C-13	文件：125.82 Kbytes Page：6 Pages	PNP SURFACE MOUNT TRANSISTOR Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary NPN Type: MJD31C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gree 文件：125.82 Kbytes 页数：6 Pages	DIODES 美台半导体	DIODES
MJD32CA	文件：230.55 Kbytes Page：11 Pages	丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec 文件：230.55 Kbytes 页数：11 Pages	NEXPERIA 安世	NEXPERIA
MJD32CG	文件：129.229 Kbytes Page：11 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件：129.229 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD32CQ	文件：315.53 Kbytes Page：7 Pages	100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp 文件：315.53 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
MJD32CQ-13	文件：315.53 Kbytes Page：7 Pages	100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp 文件：315.53 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
MJD32CRLG	文件：129.229 Kbytes Page：11 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件：129.229 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD32CT4	文件：173.62 Kbytes Page：9 Pages	Low voltage PNP power transistor DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX 文件：173.62 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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晶体管资料

型号：
MJD32
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
低频或音频放大（LF）_功率放大（PA）
封装形式：
贴片封装
极限工作电压：
最大电流允许值：
3A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
15W
放大倍数：
图片代号：
G-217
vtest：
0
htest：
999900
atest：
3
wtest：
15

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
1.2
IC Cont. (A)：
3
VCEO Min (V)：
40
VCBO (V)：
40
VEBO (V)：
5
VBE(on) (V)：
1.8
hFE Min：
10
hFE Max：
50
fT Min (MHz)：
3
PTM Max (W)：
15
Package Type：
DPAK-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	MJD32	MOTOR	24+		860		询价
深圳市赛芯源科技有限公司	MJD32	ON	18+	TO-252	41200	原装正品,现货特价	询价
深圳市威尔健半导体有限公司	MJD32	DIOS	23+	SOT-23	69820	终端可以免费供样,支持BOM配单!	询价
深圳市正纳电子有限公司	MJD32	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市芯皇电子有限公司	MJD32	ON	22+	TO-220-3	50000	原装正品假一罚十,代理渠道价格优	询价
深圳市南科功率半导体有限公司	MJD32	NK/南科功率	2025+	TO-252	986966	国产	询价
深圳市益百分电子有限公司	MJD32C	MOT	99+	SOT252/2.5	4300	全新原装进口自己库存优势	询价
深圳市联世界科技有限公司	MJD32RL	ONSEMI	24+/25+		7200	原装正品现货库存价优	询价
深圳市粤科源兴科技有限公司	MJD32CTF	DISCRETE	2000	FSC	14000		询价
深圳市勤思达科技有限公司	MJD32CT4G	ON	1415+	TO-252(DPAK)	28500	全新原装正品,优势热卖	询价

更多MJD32供应商更新时间2026-2-5 15:30:00

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