General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C

文件：49.27 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

SILICON POWER TRANSISTORS

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：150.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary NPN Type: MJD31C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gree

文件：125.82 Kbytes 页数：6 Pages

DIODES

美台半导体

Silicon PNP epitaxial planer Transistors

Features • Designed for General Purpose Amplifier and Low Speed Switching Applications • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Comp

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MCC

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in general purpose amplifier and switching applications.

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DCCOM

道全

isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) • Complement to Type MJD31C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

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ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.2V(Max) @IC= -3A ·Complement to Type MJD31C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

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ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffi

文件：483.64 Kbytes 页数：3 Pages

JIANGSU

长电科技

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplif)ier and switching applications.

文件：358.17 Kbytes 页数：1 Pages

TGS