丝印：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -100V • IC = -3A high Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary NPN Type: MJD31C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gree

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DIODES

美台半导体

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C

文件：49.27 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SILICON POWER TRANSISTORS

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：150.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：D-PAK；Package：TO-252；TRANSISTOR (PNP)

FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electrically

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FS

isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 25(Min)@ IC= -1A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) • Complement to Type MJD31C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

文件：261.22 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.2V(Max) @IC= -3A ·Complement to Type MJD31C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.32 Kbytes 页数：2 Pages

ISC

无锡固电