MJD32C

Low voltage PNP power transistor

DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX

MJD32C

SILICON POWER TRANSISTORS

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

MJD32C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable

MJD32C

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designedforuseingeneralpurposeamplifierandswitchingapplications.

MJD32C

PNP SURFACE MOUNT TRANSISTOR

Features •BVCEO>-100V •IC=-3AhighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryNPNType:MJD31C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gree

MJD32C

Marking：D-PAK；Package：TO-252；TRANSISTOR (PNP)

FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electrically

MJD32C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi

MJD32C

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowSpeed,LoadFormedforSurfaceMountApplication. Applications GeneralPurposeAmplifier.

MJD32C

Silicon PNP epitaxial planer Transistors

Features •DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Comp

MJD32C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suffi