丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件：230.55 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件：230.55 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司