丝印 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MJD44H11 | 型号:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele 文件:241.83 Kbytes 页数:12 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
型号:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El 文件:242.13 Kbytes 页数:12 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
MJD44H11 | 型号:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele 文件:241.83 Kbytes 页数:12 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | |
型号:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El 文件:242.13 Kbytes 页数:12 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
型号:MJD44H11;Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an 文件:263.67 Kbytes 页数:7 Pages | POWEREX | POWEREX | ||
型号:MJD44H11;isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl 文件:342.76 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
型号:MJD44H11;SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S 文件:192.88 Kbytes 页数:6 Pages | Motorola 摩托罗拉 | Motorola | ||
型号:MJD44H11;SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra 文件:192.88 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
型号:MJD44H11;COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app 文件:64.379 Kbytes 页数:5 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
型号:MJD44H11;General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds 文件:36.29 Kbytes 页数:4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
MJD44H11
- 功能描述:
两极晶体管 - BJT 8A 80V 20W NPN
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
TO-252 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
NEXPERIA/安世 |
25+ |
DPAK-3 |
600000 |
NEXPERIA/安世全新特价MJD44H11即刻询购立享优惠#长期有排单订 |
询价 | ||
on |
23+ |
TO252/DPAK |
3500 |
原厂原装正品 |
询价 | ||
Nexperia |
24+ |
TO-252 |
27500 |
原装现货,有上库存就有货,假一赔十 |
询价 | ||
ON(安森美) |
2023+ |
N/A |
4550 |
全新原装正品 |
询价 | ||
ON(安森美) |
23+ |
9281 |
公司只做原装正品,假一赔十 |
询价 | |||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ON/安森美 |
24+ |
SOT-252 |
10000 |
只有原装 |
询价 | ||
ON(安森美) |
24+ |
N/A |
82048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 |
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