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MJD44H11

型号:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

文件:241.83 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD44H11A

型号:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件:242.13 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD44H11

型号:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

文件:241.83 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD44H11A

型号:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件:242.13 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号:MJD44H11;Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

文件:263.67 Kbytes 页数:7 Pages

POWEREX

型号:MJD44H11;isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

文件:342.76 Kbytes 页数:2 Pages

ISC

无锡固电

型号:MJD44H11;SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

文件:192.88 Kbytes 页数:6 Pages

Motorola

摩托罗拉

型号:MJD44H11;SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

文件:192.88 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

型号:MJD44H11;COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

文件:64.379 Kbytes 页数:5 Pages

STMICROELECTRONICS

意法半导体

型号:MJD44H11;General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds

文件:36.29 Kbytes 页数:4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    MJD44H11

  • 功能描述:

    两极晶体管 - BJT 8A 80V 20W NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
Nexperia(安世)
24+
TO-252
1259
原厂订货渠道,支持BOM配单一站式服务
询价
NEXPERIA/安世
25+
DPAK-3
600000
NEXPERIA/安世全新特价MJD44H11即刻询购立享优惠#长期有排单订
询价
on
23+
TO252/DPAK
3500
原厂原装正品
询价
Nexperia
24+
TO-252
27500
原装现货,有上库存就有货,假一赔十
询价
ON(安森美)
2023+
N/A
4550
全新原装正品
询价
ON(安森美)
23+
9281
公司只做原装正品,假一赔十
询价
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ON/安森美
24+
SOT-252
10000
只有原装
询价
ON(安森美)
24+
N/A
82048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
更多MJD44H11供应商 更新时间2025-8-7 9:13:00