丝印：MJD44H11；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

文件：241.83 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：MJD44H11A；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件：242.13 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：MJD44H11；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

文件：241.83 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：MJD44H11A；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件：242.13 Kbytes 页数：12 Pages

NEXPERIA

安世

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

文件：192.88 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

文件：263.67 Kbytes 页数：7 Pages

POWEREX

isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

文件：342.76 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary Power Transistors

Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available

文件：46.83 Kbytes 页数：2 Pages

KEXIN

科信电子

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

文件：64.379 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体