丝印：MJE3055；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

文件：1.37433 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：MJE3055；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

文件：1.37433 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Complementary Silicon Plastic Power Transistors

Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

文件：75.17 Kbytes 页数：4 Pages

SYC

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件：129.259 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

文件：65.19 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C)

文件：216.66 Kbytes 页数：6 Pages

SAMSUNG

三星

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件：64.709 Kbytes 页数：1 Pages

WINGS

永盛电子

General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

文件：36.92 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：55.44 Kbytes 页数：1 Pages

TEL

Plastic-Encapsulate Power Transistors

Plastic-Encapsulate Power Transistors P/b Lead(Pb)-Free

文件：133.75 Kbytes 页数：3 Pages

WEITRON