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MJE3055

丝印:MJE3055;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

文件:1.37433 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

MJE3055

丝印:MJE3055;Package:TO-220-3L;TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

文件:1.37433 Mbytes 页数:4 Pages

DGNJDZ

南晶电子

MJE3055

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:125.54 Kbytes 页数:1 Pages

WINNERJOIN

永而佳

MJE3055

Complementary Silicon Plastic Power Transistors

Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

文件:75.17 Kbytes 页数:4 Pages

SYC

MJE3055

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:55.44 Kbytes 页数:1 Pages

TEL

MJE3055

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件:129.259 Kbytes 页数:4 Pages

MOTOROLA

摩托罗拉

MJE3055

Plastic-Encapsulate Power Transistors

Plastic-Encapsulate Power Transistors P/b Lead(Pb)-Free

文件:133.75 Kbytes 页数:3 Pages

WEITRON

MJE3055

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.

文件:241.59 Kbytes 页数:2 Pages

ISC

无锡固电

MJE3055

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose and Switching Applications

文件:1.41214 Mbytes 页数:2 Pages

JIANGSU

长电科技

MJE3055

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件:64.709 Kbytes 页数:1 Pages

WINGS

永盛电子

晶体管资料

  • 型号:

    MJE3055

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    70V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD207,BD213/80,BD607,3DD166B,

  • 最大耗散功率:

    90W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    70

  • htest:

    999900

  • atest:

    10

  • wtest:

    90

详细参数

  • 型号:

    MJE3055

  • 制造商:

    TRSYS

  • 制造商全称:

    Transys Electronics

  • 功能描述:

    Plastic-Encapsulated Transistors

供应商型号品牌批号封装库存备注价格
CJ
17+
TO-220
6050
全新原装正品s
询价
FSC
23+
TO-220
4940
原厂原装正品
询价
ST
24+
TO-220
66500
郑重承诺只做原装进口现货
询价
FSC
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
ON
TO-220
50000
询价
24+
5000
公司存货
询价
ST
01+
TO220
2500
原装现货价格有优势量大可以发货
询价
原厂
23+
TO-220
5000
原装正品,假一罚十
询价
ST
17+
DIP
9888
全新进口原装,现货库存
询价
TI
23+
SOT23
2000
全新原装假一赔十
询价
更多MJE3055供应商 更新时间2026-1-20 10:18:00