MJE3055

型号：MJE3055；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES GeneralPurposeandSwitchingApplications

MJE3055

型号：MJE3055；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES GeneralPurposeandSwitchingApplications

型号：MJE3055；Complementary Silicon Plastic Power Transistors

Features •HighCurrentGain−BandwidthProduct •TheseDevicesarePb−FreeandareRoHSCompliant*

型号：MJE3055；NPN Silicon Plastic-Encapsulate Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof2.0WattsofPowerDissipation. •Collector-current10A •Collector-baseVoltage70V •Operatingandst

型号：MJE3055；TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeandSwitchingApplications

型号：MJE3055；TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

型号：MJE3055；10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

型号：MJE3055；COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

型号：MJE3055；NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

型号：MJE3055；SILICON EPITAXIAL PLANAR TRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose