| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD41C | 丝印：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear 文件：229.4 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | |
MJD41C | 丝印：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil 文件：2.36263 Mbytes 页数：5 Pages | DGNJDZ 南晶电子 | DGNJDZ | |
丝印：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i 文件：222.45 Kbytes 页数：10 Pages | NEXPERIA 安世 | NEXPERIA | ||
MJD41C | 丝印：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear 文件：229.4 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | |
MJD41C | 丝印：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil 文件：2.36263 Mbytes 页数：5 Pages | DGNJDZ 南晶电子 | DGNJDZ | |
丝印：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i 文件：222.45 Kbytes 页数：10 Pages | NEXPERIA 安世 | NEXPERIA | ||
MJD41C | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. 文件：563.62 Kbytes 页数：5 Pages | FS | FS | |
MJD41C | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications 文件：297.53 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
MJD41C | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications 文件：278.48 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
MJD41C | Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect 文件：195.8 Kbytes 页数：6 Pages | ONSEMI 安森美半导体 | ONSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
- 性质：
低频或音频放大 （LF）_功率放大 （PA）
- 封装形式：
贴片封装
- 极限工作电压：
- 最大电流允许值：
6A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
20W
- 放大倍数：
- 图片代号：
G-217
- vtest：
0
- htest：
999900
- atest：
6
- wtest：
20
详细参数
- 型号：
MJD41C
- 制造商：
ONSEMI
- 制造商全称：
ON Semiconductor
- 功能描述：
Complementary Power Transistors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
20300 |
ONSEMI/安森美原装特价MJD41C即刻询购立享优惠#长期有货 |
询价 | ||
TO-252/220 |
2021 |
CJ |
52500 |
全新原装公司现货
|
询价 | ||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
CJ/长电 |
25+ |
TO-252 |
9000 |
只做进口原装假一罚百 |
询价 | ||
CJ |
20+ |
TO-252-2L |
110 |
原装现货17377264928微信同号 |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
长电 |
24+ |
TO-252 |
65300 |
一级代理/放心购买! |
询价 | ||
CJ/长电 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CJ/长电 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
询价 |
相关芯片丝印
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- MJD42C
- MJD42C
- MJD44H11A
- MJD45H11A
- MJE170
- MJE171-TU
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- KTD2151BEUO-GG-TR
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- BD5229FVE-TR
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- BD5229FVE
- PZU33BA
- NCV8164ASN280T1G
- BD5229FVE-TR
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- BD5229G
- BD52E33G
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- BD49L43G
- EC76SMBJ30A
- BD49L43G-TL
- RP130Q291D
- BD5229FVE-TR
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- BD5229G-TR
- BD5229
- BD49L43G-TR
- BD49L43G-TR
- BD5229FVE-TR
- BD49L43G-TL
- BD49L43G-TL
相关库存
更多- MJD41C
- MJD42C-Q
- MJD44H11
- MJD45H11
- MJD50TF-O-R-B-A
- MJE170-TU
- MJE171
- MJE172
- MJE3055
- LM4041DIDCKRG4
- LM4041DIDCKR.A
- LM4041DIDCKRG4.A
- SMBJ30A
- 1SMB30AT3
- BD5229
- BD5229G-TR
- BD5229
- BD49L43G-TL
- BD5229G-TR
- BD5229G-TR
- SSDJ30A
- BD5229
- P6SMB33
- P6SMBJ33
- BD5229G-TR
- BD5229G-TR
- SMBJ30A
- BD5229FVE
- BD49L43G-TL
- BD49L43
- BD49L43G-TR
- BD49L43G-TL
- BD5229FVE-TR
- BD49L43G-TL
- BD49L43G-TR
- BD49L43G-TR
- BD49L43G-TL
- BD5229G
- SMBJ30A
- BD49L43G-TR
- BD5229G-TR
- BD5229FVE-TR
- BD5229FVE-TR
- 2SAR567F3
- BD5229FVE-TR
