型号：MJD42C；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件：230.14 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD42C；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simila

文件：2.47687 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

型号：MJD42C-Q；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：223.58 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD42C；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件：230.14 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD42C；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simila

文件：2.47687 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

型号：MJD42C-Q；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：223.58 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD42C；Silicon PNP epitaxial planer Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically similar to popular TIP41 and

文件：372.98 Kbytes 页数：2 Pages

MCC

美微科

型号：MJD42C；isc Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= -0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type MJD41C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：183.39 Kbytes 页数：3 Pages

ISC

无锡固电

型号：MJD42C；Silicon PNP transistor in a TO-252 Plastic Package.

Descriptiona Silicon PNP transistor in a TO-252 Plastic Package. Features Complement to MJD41C. Applications Medium power linear switching applications.

文件：828.26 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

型号：MJD42C；TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“

文件：897.03 Kbytes 页数：2 Pages

JIANGSU

长电科技