丝印：MJD42CA；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

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100 V, 6 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：223.58 Kbytes 页数：10 Pages

NEXPERIA

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100 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n NPN complement: MJD41C-Q • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD42 series\n• Low collector emitter saturation voltage\n• Fast switching speeds\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 6A DPAK

Nexperia USA Inc.