丝印：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：222.45 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：222.45 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 6 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJD42C-Q • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD41 series\n• Low collector emitter saturation voltage\n• Fast switching speeds\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 10A DPAK

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司