丝印：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件：229.4 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil

文件：2.36263 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：222.45 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

文件：229.4 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil

文件：2.36263 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

文件：222.45 Kbytes 页数：10 Pages

NEXPERIA

安世

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications.

文件：563.62 Kbytes 页数：5 Pages

FS

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：297.53 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.48 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

文件：195.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体