MJD32C

Marking：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

MJD32C-13

Marking：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

MJD32CQ-13

Marking：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

MJD32CA

Marking：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

MJD32CUQ-13

Marking：MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp