丝印：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

文件：230.35 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件：230.55 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A High Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp

文件：384.05 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

文件：230.35 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：373.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32C；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

文件：433.13 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件：230.55 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -100V • IC = -3A High Continuous Collector Current • ICM = -5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Comp

文件：384.05 Kbytes 页数：7 Pages

DIODES

美台半导体