丝印：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIA

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Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes 页数：234 Pages

NEXPERIA

安世

100 V, 3 A PNP high power bipolar transistor

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n NPN complement: MJD31CA • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD31 series\n• Low collector emitter saturation voltage\n• Fast switching speeds\n• AEC-Q101 qualified;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：MJD32CA/SOT428/DPAK

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