MJD42C

Marking：MJD42CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimila

MJD42C

Marking：MJD42C；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear

MJD42C-Q

Marking：MJD42CA；Package：DPAK；100 V, 6 A PNP high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei

MJD44H11

Marking：MJD44H11；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele

MJD44H11A

Marking：MJD44H11A；Package：DPAK；80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El

MJD45H11

Marking：MJD45H11；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele

MJD45H11A

Marking：MJD45H11A；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El

MJD50TF-O-R-B-A

Marking：MJD50；Package：DPAK；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ●Highbreakdownvoltage ●Highcurrentcapability ●Highswitchingspeed ●Highreliability ●RoHSproduct APPLICATIONS ●Highfrequencyswitchingpowersupply ●Highfrequencypowertransform ●Commonlypoweramplifiercircuit

MJE170

Marking：MJE170；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowPowerAudioAmplifier LowCurrent,HighSpeedSwitchingApplications

MJE170-TU

Marking：MJE170；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES LowPowerAudioAmplifier LowCurrent,HighSpeedSwitchingApplications