MJD31CA

Marking：MJD31CA；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

MJD31CH-Q

Marking：MJD31CAH；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto

MJD31CTF

Marking：MJD31C；Package：SOT-428；NPN Epitaxial Silicon Transistor

NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C

MJD31CUQ-13

Marking：MJD31CU；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Complem

MJD32C

Marking：MJD32C；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect

MJD32CA

Marking：MJD32CA；Package：DPAK；100 V, 3 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD31CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec

MJD32CUQ-13

Marking：MJD32CU；Package：TO-252；100V PNP HIGH VOLTAGE TRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>-100V •IC=-3AHighContinuousCollectorCurrent •ICM=-5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •Comp

MJD41C

Marking：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear

MJD41C

Marking：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimil

MJD41C-Q

Marking：MJD41CA；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei