KTD2151BEUO-GG-TR

Marking：MJYYZ；Package：WLCSP-15；Programmable Dual Output LCD Bias Power

Features •Inputvoltagerange(2.7Vto5.5V) •Dualoutputregulatorwithsingleinductor •Highefficiencyabove85 •ChargepumpwithPFMmodeatlightload •Programmableoutputvoltages •Positiveoutputvoltagerange +4.0Vto+6.3V(100mV/step) •Negativeoutputvoltagerange 

LM4041DIDCKR

Marking：MJU；Package：SC70；LM4041 Precision Micropower Shunt Voltage Reference

1Features •1.225VFixedandadjustableoutputs (1.225Vto10V) •Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–Agrade –Maximum0.2%,100ppm/°C–Bgrade –Maximum0.5%,100ppm/°C–Cgrade –Maximum1.0%,150ppm/°C–Dgrade •Low

LM4041DIDCKRG4

Marking：MJU；Package：SC70；LM4041 Precision Micropower Shunt Voltage Reference

1Features •1.225VFixedandadjustableoutputs (1.225Vto10V) •Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–Agrade –Maximum0.2%,100ppm/°C–Bgrade –Maximum0.5%,100ppm/°C–Cgrade –Maximum1.0%,150ppm/°C–Dgrade •Low

MJD127

Marking：MJD127；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C

MJD148

Marking：MJD148；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Electricallysimilartopopul

MJD148-Q

Marking：MJD148A；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD148series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforuse

MJD2873

Marking：MJD2873；Package：DPAK；50 V, 2 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD2873series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Line

MJD2873-Q

Marking：MJD2873A；Package：DPAK；50 V, 2 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD2873series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforuse

MJD3055

Marking：MJD3055XXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

MJD31C

Marking：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elect