丝印：MJ9；36 V Input Voltage Detector with Release Delay Function for Industrial Applications

● Highly accurate voltage detection with detector threshold accuracy ±1.5% (Ta = 25°C) ● Selectable options of VDD Pin Detection, SENSE Pin Detection and VDD Pin Detection without Hysteresis ● Adjustiment of the release delay time (Power-on Reset Time) by connecting external capacitors ● Re

文件：1.19398 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

丝印：MJ9；36 V Input Voltage Detector with Release Delay Function

● Highly accurate voltage detection with detector threshold accuracy ±1.5% (Ta = 25°C) ● Selectable options of VDD Pin Detection, SENSE Pin Detection and VDD Pin Detection without Hysteresis ● Adjustment of the release delay time (Power-on Reset Time) by connecting external capacitors ● Red

文件：1.27685 Mbytes 页数：31 Pages

NISSHINBO

日清纺微电子

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

文件：115.12 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

文件：175.78 Kbytes 页数：4 Pages

COMSET

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC=-3A • Low Collector Saturation Voltage- : VCE (sat)=-2.0V(Max.)@ IC=-3A APPLICATIONS • Designed for use as output devices in complementary general purpose ampl

文件：215.4 Kbytes 页数：2 Pages

ISC

无锡固电

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

文件：175.78 Kbytes 页数：4 Pages

COMSET

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

文件：115.12 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY POWER DARLINGTONS

文件：78.34 Kbytes 页数：3 Pages

COMSET