丝印：MJD31C；Package：TO-252；Silicon Epitaxial Planar Transistor

Features - Lead formed for surface mount application. - AEC-Q101 Qualified. - Straight lead.

文件：485.13 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

文件：230.43 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD31C；Package：SOT-428；NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C

文件：227.74 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：MJD31C；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD31C；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD31CA；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件：231.53 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD31CAH；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to

文件：226.32 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD31CU；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem

文件：382.34 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

文件：230.43 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD31C；Package：SOT-428；NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C

文件：227.74 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体