型号：MJD148；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popul

文件：220.69 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD148-Q；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD148 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use

文件：222.91 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD148；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popul

文件：220.69 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD148-Q；Package：DPAK；45 V, 4 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD148 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use

文件：222.91 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD148；NPN SILICON PLASTIC POWER TRANSISTORS

NPN SILICON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications

文件：596.78 Kbytes 页数：5 Pages

CDIL

型号：MJD148；Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 45V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 2A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

文件：279.09 Kbytes 页数：2 Pages

ISC

无锡固电

型号：MJD148；NPN Silicon Power Transistor

NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @

文件：69.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

型号：MJD148；isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE = 85(Min) @ IC= 0.5A • Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in general

文件：244.77 Kbytes 页数：2 Pages

ISC

无锡固电

型号：MJD148-QJ；45 V, 4 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD148 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use

文件：222.91 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MJD148T4；NPN Silicon Power Transistor

NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @

文件：69.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体