N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS=1500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V APPLICATIONS · Pulse Circuits · Capacitor Discharge Applications · High Voltage Power Supplies

文件：347 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：118.64 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Littelfuse

力特

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

文件：310.71 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

文件：310.71 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

文件：365.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体