IXTH4N150

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V APPLICATIONS ·PulseCircuits ·CapacitorDischargeApplications ·HighVoltagePowerSupplies

IXTH4N150

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXTJ4N150

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXTT4N150HV

N-ChannelEnhancementModeFastIntrinsicDiode

MP4N150

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical18pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

MP4N150-GA-BR

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical18pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

P4N150

N-channel1500V,5廓,4A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STFV4N150

N-channel1500V-5廓-4A-TO-220FHVeryhighvoltagePowerMESH??PowerMOSFET

STFV4N150

N-channel1500V-5廓-4A-PowerMESH??PowerMOSFETTO-220-TO-220FH-TO-247-TO-3PF

STFV4N150

N-CHANNEL1500V-5-ohm-4ATO-220FHVeryHighVoltagePowerMESH-TMMOSFET

Description UsingthewellconsolidatedhighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofveryhighvoltagePowerMOSFETswithoutstandingperformances. Thestrengthenedlayoutcoupledwiththecompany’sproprietaryedgeterminationstructure,givesth