STP4N150中文资料意法半导体数据手册PDF规格书
STP4N150规格书详情
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
■ 100 avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic packages
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
■ Creepage distance path is > 4 mm for TO-220FH
Application
■ Switching applications
产品属性
- 型号:
STP4N150
- 功能描述:
MOSFET PowerMESH MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
22+ |
TO-220 |
13568 |
实力现货,随便验! |
询价 | ||
ST/意法 |
2021+ |
TO-220-3 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
ST/意法半导体 |
TO-220-3 |
6000 |
询价 | ||||
ST/意法半导体 |
2023+ |
TO-220-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
ST/意法半导体 |
2023 |
TO-220-3 |
5200 |
公司原装现货/支持实单 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST |
2020+ |
TO-220 |
2080 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST |
24+ |
TO-220 |
39500 |
进口原装现货 支持实单价优 |
询价 | ||
TI |
专业铁帽 |
TO-220 |
400 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
ST/意法 |
2022+ |
TO220AB |
8000 |
只做原装支持实单,有单必成。 |
询价 |