Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Avalanche rated Advantages • Easy to mount • Space savings • High power density Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power

文件：239.52 Kbytes 页数：7 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Speed Power Switchin

文件：294.91 Kbytes 页数：2 Pages

ISC

无锡固电

N通道沟槽栅 Gen1 MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Avalanche rated Advantages • Easy to mount • Space savings • High power density Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power

文件：239.52 Kbytes 页数：7 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：301.07 Kbytes 页数：2 Pages

ISC

无锡固电