N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Package ● Low Intrinsic Gate Resistance ● miniBLOC with Aluminum Nitride Isolation ● Fast Intrinsic Diode ● Extended FBSOA ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductanc

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

·DESCRIPTION ·Drain Current -ID= 62A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converte

文件：442.11 Kbytes 页数：3 Pages

ISC

无锡固电

N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

Littelfuse

力特

Linear Power MOSFET w/Extended FBSOA

文件：155 Kbytes 页数：5 Pages

IXYS

艾赛斯