IXTP2N100P

N-Channel Enhancement Mode Avalanche Rated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications:

IXTP2N100P

isc N-Channel MOSFET Transistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7.5Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-M

IXTP2N100P

N通道标准 Polar™ MOSFET; • 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感\n;

IXTY2N100P

iscN-ChannelMOSFETTransistor

IXTY2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications:

KSMD2N100

1000VN-ChannelMOSFET

KSMU2N100

1000VN-ChannelMOSFET

TPAOD2N100

1000VN-ChannelMOSFET

Application »Adaptor «Charger «Powermanagement oSMPSStandbyPower

TPFQD2N100TM

1000VN-ChannelMOSFET

Application »Adaptor «Charger «Powermanagement oSMPSStandbyPower

TSM2N100CH

N-ChannelPowerMOSFET